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[Analysis Case] Evaluation of Depth Profile Concentration Distribution of Alkali Metals in SiO2 by GCIB

Evaluation of impurities in SiO2 films

Alkali metals such as Li, Na, and K are key elements that cause various failures in semiconductors. These are referred to as mobile ions that can move within the film during measurement, making it difficult to obtain an accurate distribution. In this study, by conducting depth-direction analysis using a GCIB (Ar cluster) with a sputter ion source in TOF-SIMS, it was found that the movement of alkali metals can be suppressed even at room temperature compared to oxygen sputter guns. This measurement allows for qualitative and quantitative analysis of impurities within SiO2 films. Measurement method: TOF-SIMS Product fields: LSI, memory, electronic components Analysis purpose: Trace concentration evaluation For more details, please download the materials or contact us.

• Company：一般財団法人材料科学技術振興財団　MST
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